Ultra-Thin Fe Films on Cu(100).
نویسندگان
چکیده
منابع مشابه
Ultra-thin silicate films on metals.
Silica is one of the key materials in many modern technological applications. 'Surface science' approach for understanding surface chemistry on silica-based materials, on the one hand, and further miniaturization of new generation electronic devices, on the other, all these face the necessity of rational design of the ultrathin silica films on electrically conductive substrates. The review upda...
متن کاملUltra - thin Titanium Oxide Films on
Accession #s 00936, 00937,00938 Mo(112), Measured by XPS Technique: XPS Host Material: #00936: Mo(112) Dheeraj Kumar, Ming Shu Chen, and David W. Goodman) single crystal; #00937: Si02 thin film on MO(112); #00938: TiO, thin Texas A&M University, Department of Chemistl)', College Station, Texas 77842-_Wl2 film on SiO,lMo(112) (Received 26 August 2005; accepted II August 2006; published 28 Decemb...
متن کاملFerroelectricity in ultra-thin perovskite films
We report studies of ferroelectricity in ultra-thin perovskite films with realistic electrodes. The results reveal stable ferroelectric states in thin films less than 10 Å thick with polarization normal to the surface. Under short-circuit boundary conditions, the screening effect of realistic electrodes and the influence of real metal/oxide interfaces on thin film polarization are investigated....
متن کاملThin films with ultra-low thermal expansion.
Ultra-low coefficient of thermal expansion (CTE) is an elusive property, and narrow temperature ranges of operation and poor mechanical properties limit the use of conventional materials with low CTE. We structured a periodic micro-array of bi-metallic cells to demonstrate ultra-low effective CTE with a wide temperature range. These engineered tunable CTE thin film can be applied to minimize th...
متن کاملVacuum fluctuation forces between ultra-thin films
We have investigated the role of the quantum size effects in the evaluation of the force caused by electromagnetic vacuum fluctuations between ultra-thin films, using the dielectric tensor derived from the particle in a box model. Comparison with the results obtained by adopting a continuum dielectric model shows that, for film thicknesses of 1÷10 nm, the electron confinement causes changes in ...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Hyomen Kagaku
سال: 1991
ISSN: 0388-5321,1881-4743
DOI: 10.1380/jsssj.12.610